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FIB

Focused Ion beam (FIB) probes consist of an integrated single crystal silicon cantilever and tip which have been machined (or shaped) to obtain the desired aspect ratio.  They have near vertical sidewalls and aspect ratios of more than 10:1.  Common applications include semiconductor devices, 3-D micro-optics, and development of precision metrology methods.  FIB tips are designed only for TappingMode and for profiling narrow gaps.  FIB tips should not be used in contact mode.
FIB1-100
42N/m, 320kHz, 10nm Tip Radius, 100nm-Wide-Spike @ 1µm
FIB1-100A
42N/m, 320kHz, 10nm Tip Radius, 100nm-Wide-Spike @ 1µm, Al reflective coating
FIB2-100A
42N/m, 320kHz, 10nm Tip Radius, 100nm-Wide-Spike @ 2µm, Al reflective coating
FIB2-100S
42N/m, 320kHz, 10nm Tip Radius, 100nm-Wide-Spike @ 2µm
FIB3-200A
42N/m, 320kHz, 10nm Tip Radius, 200nm-Wide-Spike @ 3µm, Al reflective coating, 5-Pack
FIB3D2-100
The FIB3D2-100 has a 100nm wide spike at 2 um from the spike apex.  Thespike is tilt-compensated by...
FIB3D2-100A
The FIB3D2-100A has a 100nm wide spike at 2 um from the spike apex.  The spike is tilt-compensated ...
FIB4-200
42N/m, 320kHz, 10nm Tip Radius, 200nm-Wide-Spike @ 4µm
FIB4-200A
42N/m, 320kHz, 10nm Tip Radius, 200nm-Wide-Spike @ 4µm, Al Reflective Coating
FIB6-400
42N/m, 320kHz, 10nm Tip Radius, 400nm-Wide-Spike @ 6µm
FIB6-400A
42N/m, 320kHz, 10nm Tip Radius, 400nm-Wide-Spike @ 6µm, Al reflective coating
FIB8-600
42N/m, 320kHz, 10nm Tip Radius, 600nm-Wide-Spike @ 8µm
FIB8-600A
42N/m, 320kHz, 10nm Tip Radius, 600nm-Wide-Spike @ 8µm, Al reflective coating