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Product Description:

The FIB3D2-100 has a 100nm wide spike at 2 um from the spike apex.  Thespike is tilt-compensated by 3 degrees and the cantilever is uncoated.

Focused Ion Beam (FIB) probes consist of an integrated single crystal TESPsilicon cantilever and tip that have been machined (or shaped) toobtain the desired high aspect ratio.  They have near vertical sidewallsand aspect ratios of more than 10:1.  Common applications includesemiconductor devices, 3-D micro-optics, and development of precisionmetrology methods.  FIB tips are designed only for TappingMode and forprofiling narrow gaps.  FIB tips should not be used in contact mode.

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Model Instrument Mount Pack Size Price Pack Quantity
FIB3D2-100 Vx & UVx - Automated AFM Unmounted 5 $1,000.00 (USD)

Shape Resonant Freq. kHz Spring Const. N/m Length µm Width µm
Nom. Min. Max. Nom. Min. Max. Nom. Min. Max. Nom. Min. Max.
Rectangular 320 230 410 42 20 80 125 140 110 40 30 50

Tip Specification

Geometry: High Aspect Ratio
Tip Height (h): 10 - 15µm
Front Angle (FA): 1 ± 0.5º
Back Angle (BA): 1 ± 0.5 º
Side Angle (SA): 1 ± 0.5 º
Tip Radius (Nom): 10 nm
Tip Radius (Max): 15 nm
Tip SetBack (TSB)(Nom): 15 µm
Tilt Compensation: 3º
Tip Set Back (TSB)(RNG): 5 - 25 µm
SpikeH(Rng): 4000 - 6000 nm
SpikeW: 100 nm

Cantilever Specification

Material: 0.01 - 0.025 Ωcm Antimony (n) doped Si
Geometry: Rectangular
Cantilevers Number: 1
Cantilever Thickness (Nom): 4 µm
Cantilever Thickness (RNG): 3.25 - 4.75 µm