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FIB3D2-100
Geometry
RectangularTip Radius (nm)
Nom: 10
Max: 15
Frequency (KHz)
Nom: 320
Min: 230
Max: 410
Length (µm)
Nom: 125
Min: 140
Max: 110
Spring Const (N/m)
Nom: 42
Min: 20
Max: 80
Width (µm)
Nom: 40
Min: 30
Max: 50
Price: $1,100.00 (USD)
Sold in packs of 5
Questions? Free, Online Consulting
Overview
The FIB3D2-100 has a 100nm wide spike at 2 um from the spike apex. Thespike is tilt-compensated by 3 degrees and the cantilever is uncoated.
Focused Ion Beam (FIB) probes consist of an integrated single crystal TESP silicon cantilever and tip that have been machined (or shaped) toobtain the desired high aspect ratio. They have near vertical sidewallsand aspect ratios of more than 10:1. Common applications includesemiconductor devices, 3-D micro-optics, and development of precisionmetrology methods. FIB tips are designed only for TappingMode and forprofiling narrow gaps. FIB tips should not be used in contact mode.
Focused Ion Beam (FIB) probes consist of an integrated single crystal TESP silicon cantilever and tip that have been machined (or shaped) toobtain the desired high aspect ratio. They have near vertical sidewallsand aspect ratios of more than 10:1. Common applications includesemiconductor devices, 3-D micro-optics, and development of precisionmetrology methods. FIB tips are designed only for TappingMode and forprofiling narrow gaps. FIB tips should not be used in contact mode.
Tip Specification
Tip Height (h): 10 - 15 µm
Front Angle (FA): 1 ± 0.5º
Back Angle (BA): 1 ± 0.5º
Side Angle (SA): 1 ± 0.5º
Cantilever Specification
Material: 0.01 - 0.025 Ωcm Antimony (n) doped Si
Geometry: Rectangular
Cantilevers Number: 1
Cantilever Thickness (Nom): 4µm
Cantilever Thickness (RNG): 3.25 - 4.75µm