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Sample → Semiconductors

Semiconductors

TESPA-V2
Frequency
Nom: 320KHz
Spring Const.
Nom: 37N/m
Geometry
Rectangular
Tip Radius
7nm
Material
0.01 - 0.025 Ωcm Antimony (n) doped Si
Coating
B: Reflective Aluminum
RTESPA-300
Frequency
Nom: 300KHz
Spring Const.
Nom: 40N/m
Geometry
Rectangular
Tip Radius
8nm
Material
0.01 - 0.025 Ωcm Antimony (n) doped Si
Coating
B: Reflective Aluminum
SCM-PIT-V2
Frequency
Nom: 75KHz
Spring Const.
Nom: 3.0N/m
Geometry
Rectangular
Tip Radius
25nm
Material
0.01 - 0.025 Ωcm Antimony (n) doped Si
Coating
PtIr
F: Conductive PtIr
B: Reflective PtIr
RTESP-300
Frequency
Nom: 300KHz
Spring Const.
Nom: 40N/m
Geometry
Rectangular
Tip Radius
8nm
Material
0.01 - 0.025 Ωcm Antimony (n) doped Si
RTESPA-525
Frequency
Nom: 525KHz
Spring Const.
Nom: 200N/m
Geometry
Rectangular
Tip Radius
8nm
Material
0.01 - 0.025 Ωcm Antimony (n) doped Si
Coating
B: Reflective Aluminum
TESP-V2
Frequency
Nom: 320KHz
Spring Const.
Nom: 37N/m
Geometry
Rectangular
Tip Radius
7nm
Material
0.01 - 0.025 Ωcm Antimony (n) doped Si
PFQNE-AL
Frequency
Nom: 300KHz
Spring Const.
Nom: 0.8N/m
Geometry
Triangular
Tip Radius
5nm
Material
Silicon Nitride
Coating
B: Proprietary reflective coating
MESP-V2
Frequency
Nom: 75KHz
Spring Const.
Nom: 3.0N/m
Geometry
Rectangular
Tip Radius
35nm
Material
0.01 - 0.025 Ωcm Antimony (n) doped Si
Coating
Magnetic
F: Magnetic CoCr
B: Reflective CoCr
DTT10
DDESP-V2
Frequency
Nom: 450KHz
Spring Const.
Nom: 80N/m
Geometry
Rectangular
Tip Radius
100nm
Material
0.010-0.025 Ωcm Antimony (n) doped Si
Coating
Conductive Diamond
F: Conductive Diamond
B: Reflective Aluminum
DPT10
PT10
PFTUNA
Frequency
Nom: 70KHz
Spring Const.
Nom: 0.4N/m
Geometry
Triangular
Tip Radius
25nm
Material
Silicon Nitride
Coating
Platinum/ Iridium
F: Conductive Pt/ Ir
B: Reflective Pt/ Ir
SAA-HPI-SS
Frequency
Nom: 55KHz
Spring Const.
Nom: 0.25N/m
Geometry
Special
Tip Radius
1nm
Material
Silicon Nitride
Coating
B: Reflective Al
TT10
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