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ESPW-V2

ESPW-V2
Geometry
Rectangular
Tip Radius (nm)
Nom: 8
Max: 12
Frequency (KHz)
Nom: 13
Min: 9
Max: 17
Length (µm)
Nom: 450
Min: 440
Max: 460
Spring Const (N/m)
Nom: 0.2
Min: 0.05
Max: 0.4
Width (µm)
Nom: 50
Min: 48
Max: 52
Price: $5,985.00 (USD)
Sold in packs of 375
Questions? Free, Online Consulting
+1 (800) 715-8440
Overview
A wafer High quality etched silicon probes for contact mode imaging in air.  Unmounted for use on standard AFM's.

This AFM probe is unmounted for use on any AFM and is also available with Aluminum reflex coating as model ESPAW-V2.
 
Tip Specification
ESPW-V2 Tip Image
Tip Height (h): 10 - 15 µm
Front Angle (FA): 25 ± 2.5º
Back Angle (BA): 15 ± 2.5º
Side Angle (SA): 22.5 ± 2.5º
Cantilever Specification
ESPW-V2 Cantilever Image
Material: 0.01 - 0.025 Ωcm Antimony (n) doped Si
Geometry: Rectangular
Cantilevers Number: 1
Cantilever Thickness (Nom): 2µm
Cantilever Thickness (RNG): 1.25 - 2.75µm
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